DocumentCode :
3586292
Title :
An 10-Gb/s pulse-mode I/O for on-chip 5-mm interconnect
Author :
Hung-Wen Lin ; Guan-Ru Wu ; Zhi-Xiang Shao ; Yong-Hsin Huang
Author_Institution :
Dept. of Electr. Eng., YuanZe Univ., Chungli, Taiwan
fYear :
2014
Firstpage :
90
Lastpage :
91
Abstract :
This paper proposes a low-power pulse-mode I/O for an on-chip data link. To use low-area MOS-type AC-coupling capacitors and the high-bandwidth source-follower-type receiver front-end, the common-mode levels of the channels are set higher than the supply voltages of I/Os. The signal amplification and high-pass filtering function at the receiver were designed using standard logic gates and MOS-type resistors only. The proposed I/Os were realized in a 90-nm CMOS process at 10Gbps and with 5-mm of on-chip microstrip channels. A test chip revealed that the I/O occupies a total area of 0.0025 mm2, consumes 3.4 mW at 1.2 V of supply voltage, equal to a power efficiency of 0.068 pJ/bit/mm.
Keywords :
CMOS integrated circuits; MOS capacitors; driver circuits; integrated circuit interconnections; CMOS process; MOS-type resistors; bit rate 10 Gbit/s; common-mode level; high-bandwidth source-follower-type receiver front-end; high-pass filtering function; low-area MOS-type AC-coupling capacitors; low-power pulse-mode I-O; on-chip data link; on-chip interconnect; on-chip microstrip channels; power 3.4 mW; size 90 nm; standard logic gates; supply voltages; test chip; voltage 1.2 V; Couplings; Logic gates; Oscilloscopes; input/output (I/O); pulse signaling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2014 International
Type :
conf
DOI :
10.1109/ISOCC.2014.7087576
Filename :
7087576
Link To Document :
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