Title :
Comparative analysis of using planar MOSFET and FinFET as access transistor of STT-RAM Cell in 22-nm technology node
Author :
Byungkyu Song ; Taehui Na ; Hanwool Jeong ; Kang, Seung H. ; Jung Pill Kim ; Seong-Ook Jung
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
As technology node scaling, FinFET becomes the substitution for planar MOSFET due to several merits of FinFET such as superior gate controllability, large on-current, and low variability. For the reasons, using FinFET as access transistor of spin-transfer-torque random access memory (STT-RAM) cell should be analyzed. This paper compares using planar MOSFET and FinFET as access transistor of STT-RAM cell and concludes which device is more proper solution for high write and read yields.
Keywords :
MOSFET; random-access storage; FinFET; STT-RAM cell; access transistor; gate controllability; on-current; planar MOSFET; read yield; size 22 nm; spin-transfer-torque random access memory cell; technology node scaling; write yield; Controllability; FinFETs; Integrated circuits; Logic gates; Process control; Resistance; Resource description framework; Access transistor; FinFET; MRAM; Read yield; STT-RAM; Technology node scaling;
Conference_Titel :
SoC Design Conference (ISOCC), 2014 International
DOI :
10.1109/ISOCC.2014.7087593
