• DocumentCode
    3586345
  • Title

    An output-capacitorless low dropout regulator without resistors

  • Author

    Jie Mei ; Hao Zhang ; Yoshihara, Tsutomu

  • Author_Institution
    Grad. Sch. of Inf., Production & Syst., Waseda Univ., Fukuoka, Japan
  • fYear
    2014
  • Firstpage
    246
  • Lastpage
    247
  • Abstract
    An all-MOSFET low-power low-dropout regulator is designed in CMOS technology, featuring low sensitivity with respect to input voltage and temperature. Supply voltage can be as low as 800mV. An error amplify (EA) with an embedded voltage reference (EVR) is employed and a buffer is used to improve the load transient. The circuit is simulated in 0.18 μm CMOS technology. Simulated results verify that the proposed LDO is stable for a capacitive load from 0 to 10 pF and with load capability of 50 mA. The maximum overshoot and undershoot under a 0.8 V supply are less than 90 mV for full load current changes within 1 μs edge time, and the recovery time is less than 1.5 μs. The temperature coefficient (TC) is 37.8 ppm/°C ranging from -25 °C to 100 °C.
  • Keywords
    MOSFET; low-power electronics; voltage regulators; CMOS technology; all-MOSFET low-power low-dropout regulator; capacitance 0 pF to 10 pF; current 50 mA; embedded voltage reference; error amplify; load transient; output-capacitorless low dropout regulator; size 0.18 mum; temperature -25 degC to 100 degC; Artificial intelligence; CMOS integrated circuits; CMOS technology; Distance measurement; RNA; Regulators; Output-Capacitorless low-dropout regulator; embedded voltage reference; low voltage; temperature coefficient;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SoC Design Conference (ISOCC), 2014 International
  • Type

    conf

  • DOI
    10.1109/ISOCC.2014.7087629
  • Filename
    7087629