DocumentCode
3586395
Title
The design of SCR-based dual direction ESD protection circuit with low trigger voltage
Author
Yong-Nam Choi ; Jung-Woo Han ; Hyun-Young Kim ; Chung-Kwang Lee ; Yong-Seo Koo
Author_Institution
Dept. of Electron. & Electr. Eng., Dankook Univ., Yongin, South Korea
fYear
2014
Firstpage
167
Lastpage
168
Abstract
In this paper, a SCR(Silicon Controlled Rectifier)-based dual directional ESD protection circuit is proposed. The proposed protection circuit can provide effective protection for ICs against ESD (Electrostatic Discharge) in the both positive and negative directions. To analysis its electrical characteristics, it is verified through the TLP(Transmission Line Pulse) system. Also thermal reliability under high temperature conditions (300K-500K) is verified. In the measurement results, it has trigger voltage of 10.16V and holding voltage of 4.64V. It is shown that the proposed protection circuit has superior characteristics compared to the conventional SCR. In addition, these characteristics make the proposed protection circuit has area efficiency. As a result, the proposed dual directional ESD protection circuit can discharge ESD current in four stress mode (PD, ND, PS, NS) with superior characteristics and reliability.
Keywords
electrostatic discharge; high-frequency transmission lines; protection; silicon; thyristors; SCR-based dual direction ESD protection circuit; Si; area efficiency; electrical characteristics; electrostatic discharge; high temperature conditions; low trigger voltage; silicon controlled rectifier; stress mode; temperature 300 K to 500 K; thermal reliability; transmission line pulse system; voltage 10.16 V to 4.64 V; Clamps; Discharges (electric); Earth Observing System; Electrostatic discharges; Resistors; Silicon; Voltage measurement; ESD; Holding Voltage; SCR; Trigger Voltage; ggNMOS;
fLanguage
English
Publisher
ieee
Conference_Titel
SoC Design Conference (ISOCC), 2014 International
Type
conf
DOI
10.1109/ISOCC.2014.7087679
Filename
7087679
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