DocumentCode :
3586541
Title :
Design of a V-band MMIC LNA for WPAN applications around 60 GHz
Author :
Al Majid, Noha ; Mazer, Said ; El Bekkali, Moulhime ; Algani, Catherine
Author_Institution :
LTTI Lab., Sidi Mohamed Ben Abdellah Univ., Fez, Morocco
fYear :
2014
Firstpage :
1
Lastpage :
5
Abstract :
This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1dB and its high gain which is about 23 dB. An input return loss of -6.61 dB and an output return loss of -11.26 dB are also achieved by this LNA.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium arsenide; low noise amplifiers; millimetre wave amplifiers; personal area networks; GaAs; PH15 process; PHEMT; UMS foundry; V-band MMIC LNA; WPAN receiver; cascode configuration; loss -11.26 dB; loss -6.61 dB; low noise amplifier; millimeter-wave band; monolithic microwave integrated circuit; pseudomorphic high electron mobility transistor; size 0.15 mum; wirless personal area network; Gain; Low-noise amplifiers; MMICs; Noise; Noise figure; PHEMTs; LNA; Low Noise Amplifier; MMIC technology; Pseudomorphic High Electron Mobility Transistor (PHEMT); V-band; amplifier; cascode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (MMS), 2014 14th Mediterranean
Print_ISBN :
978-1-4799-7390-3
Type :
conf
DOI :
10.1109/MMS.2014.7088973
Filename :
7088973
Link To Document :
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