Title :
A fully integrated low-power class-E power amplifier for short range communication
Author :
Ture, Kerim ; Kilinc, Enver G. ; Dehollain, Catherine
Author_Institution :
RF-IC Group, Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland
Abstract :
This paper presents the advantages and drawbacks of designing different power amplifier types. The study also compares the drain efficiencies of the current-source and switch-type power amplifiers. The appropriate power amplifier needs to be chosen for low-power short range data communication. A fully integrated low-power class-E power amplifier at 869 MHz for short range communication is designed. The power amplifier is integrated using a 0.18 μm CMOS technology. Post-layout simulation results show the effectiveness of the power amplifier. The power amplifier consumes only 487.2 μW at 0.2 V supply voltage. The drain efficiency of the power amplifier is 55% at -5.8 dBm output power for 50 Ω load.
Keywords :
CMOS integrated circuits; UHF power amplifiers; data communication; integrated circuit layout; low-power electronics; CMOS technology; frequency 869 MHz; integrated low-power class-E power amplifier; low-power short range data communication; post layout simulation; power 487.2 muW; resistance 50 ohm; size 0.18 mum; voltage 0.2 V; Capacitors; Harmonic analysis; Inductors; Power amplifiers; Power generation; Switching circuits; Transistors;
Conference_Titel :
Microwave Symposium (MMS), 2014 14th Mediterranean
Print_ISBN :
978-1-4799-7390-3
DOI :
10.1109/MMS.2014.7089007
