Analytical modeling of threshold voltage for SiGe MOSFET with two dimensional effects

Author

Mahajan, Rashmi ; Gautam, D.K.

Author_Institution

Dept. of Electron. Eng. & Tech., North Maharashtra Univ., Jalgaon, India

fYear

2014

Firstpage

1

Lastpage

3

Abstract

Dynamics of threshold voltage for pseudomorphic SiGe structure is presented in this paper. Poisson´s equation has been solved analytically considering short channel effects. Simulation obtained from analytical are in good agreement with the results from Silvaco TCAD. Validation of model for specific range of substrate concentration has been done. Analytical model developed can be extended for the use of high-k material structure as well. This work presenting as a compact solution for high-k SiGe MOSFET structure.

Keywords

Ge-Si alloys; MOSFET; Poisson equation; high-k dielectric thin films; semiconductor device models; Poisson equation; SiGe; Silvaco TCAD; analytical modeling; high-k material structure; high-k silicon-germanium MOSFET structure; model validation; pseudomorphic silicon-germanium structure; short-channel effects; silicon-germanium MOSFET; substrate concentration; threshold voltage dynamics; two-dimensional effects; Doping; MOSFET; Mathematical model; Semiconductor process modeling; Silicon; Silicon germanium; Threshold voltage; Analytical Modeling; High-k; Pseudomorphic Structures; SiGe MOSFET; TCAD; Threshold Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Convergence of Technology (I2CT), 2014 International Conference for

Print_ISBN

978-1-4799-3758-5

Type

conf

DOI

10.1109/I2CT.2014.7092218

Filename

7092218