DocumentCode
358768
Title
Application of new distributed IGBT and diode models to the analysis of chopper cells and short circuits with SABER
Author
Massol, J.L. ; Bareille, M. ; Dienot, J.M. ; Dubreuil, F.
Author_Institution
GECET/IUT, Tarbes, France
Volume
1
fYear
2000
fDate
2000
Firstpage
258
Abstract
Distributed models of diode and IGBT previously validated in ESACAP are implemented in SABER. The advantages of these simplified physical models for power electronics are demonstrated in the analysis of the chopper cell and the short circuited IGBT (turn-on, turn-off, influence of both gate resistance and supply voltage)
Keywords
choppers (circuits); circuit simulation; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; short-circuit currents; SABER; chopper cells; distributed IGBT models; distributed diode models; gate resistance; power electronics; short circuited IGBT; short circuits; supply voltage; turn-off; turn-on; Charge carrier processes; Choppers; Circuit simulation; Differential equations; Insulated gate bipolar transistors; Joining processes; Power electronics; Power semiconductor switches; Semiconductor diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 2000. PESC 00. 2000 IEEE 31st Annual
Conference_Location
Galway
ISSN
0275-9306
Print_ISBN
0-7803-5692-6
Type
conf
DOI
10.1109/PESC.2000.878852
Filename
878852
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