A novel noise mitigation deisgn for TSV-to-device coupling using power distribution network

Author

Chang Chang-Pao ; Kang Ming-Kai ; Huang Ting-Yi ; Wu Kai-bin ; Wu Ruey-Beei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2014

Firstpage

57

Lastpage

60

Abstract

The TSV-induced substrate noise has become an important issue in 3D-IC. When signals passes through TSV, noise will couple through silicon substrate and cause serious body voltage fluctuation. This paper proposes using carefully designed power distribution network (PDN) to reduce the coupling coefficient from TSV to surrounding devices. The impact of metal placement and its coverage percentage on noise isolation is evaluated. By utilizing the PDN, the keep-out zone for active devices can be reduced significantly.

Keywords

distribution networks; elemental semiconductors; integrated circuit design; integrated circuit noise; silicon; three-dimensional integrated circuits; 3D-IC; TSV-induced substrate noise; TSV-to-device coupling; active devices; body voltage fluctuation; metal placement; noise isolation; noise mitigation deisgn; power distribution network; silicon substrate; Couplings; Metals; Noise; Ports (Computers); Substrates; Through-silicon vias; body effect; keep-out zone; power distribution network; substrate coupling noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Performance of Electronic Packaging and Systems (EPEPS), 2014 IEEE 23rd Conference on

Print_ISBN

978-1-4799-3641-0

Type

conf

DOI

10.1109/EPEPS.2014.7103593

Filename

7103593