DocumentCode :
3589019
Title :
Power delivery solutions in 3-D processor-DRAM systems in presence of hot spots
Author :
Zabihi, Masoud ; Radfar, Farzad ; Sarvari, Reza
Author_Institution :
Dept. of Electr. Eng., Sharif Univ. of Technol., Tehran, Iran
fYear :
2014
Firstpage :
207
Lastpage :
210
Abstract :
An important application of 3-D integration technology is stacked processor-DRAM systems. One of the major design issues in 3-D processor-DRAM stacks is power delivery. Presence of hot spots, high density power regions, in processor die poses serious challenges to the design of power distribution network (PDN). In this paper, we investigate solutions to ensure power integrity in the hot spot regions.
Keywords :
integrated circuit interconnections; integrated circuit packaging; microprocessor chips; random-access storage; thermal management (packaging); three-dimensional integrated circuits; 3D processor-DRAM systems; hot spots; power delivery; processor die; stacked processor-DRAM system; Fluctuations; Noise; Power supplies; Solid modeling; Through-silicon vias; Voltage fluctuations; 3-D processor-DRAM integrated system; hot spot; power distribution network (PDN); power supply noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Performance of Electronic Packaging and Systems (EPEPS), 2014 IEEE 23rd Conference on
Print_ISBN :
978-1-4799-3641-0
Type :
conf
DOI :
10.1109/EPEPS.2014.7103635
Filename :
7103635
Link To Document :
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