DocumentCode :
3589262
Title :
Cross-layer racetrack memory design for ultra high density and low power consumption
Author :
Zhenyu Sun ; Wenqing Wu ; Hai Li
Author_Institution :
Swanson Sch. of Eng., Univ. of Pittsburgh, Pittsburgh, PA, USA
fYear :
2013
Firstpage :
1
Lastpage :
6
Abstract :
The racetrack memory technology utilizes magnetic domains along a nanoscopic wire to obtain ultra-high data storage density. The recent success in the planar racetrack nanowire promised its fabrication feasibility and future scalability, bringing more design challenges and opportunities. In this paper, we initialize the optimization of racetrack memory embracing design considerations across multiple layers, including cell design, array structure, architecture organization, and data management. Our evaluation shows that racetrack memory based cache can achieve 6.4× area reduction, 25% performance enhancement, and 62% energy saving, compared to STT-RAM cache design. The benefit over SRAM technology is even more significant.
Keywords :
SRAM chips; magnetic domains; nanowires; optimisation; power consumption; SRAM technology; STT-RAM cache design; architecture organization; array structure; cell design; cross-layer racetrack memory design; data management; energy saving; low power consumption; magnetic domains; nanoscopic wire; optimization; planar racetrack nanowire; ultra high density; ultra-high data storage density; Arrays; Magnetic domains; Memory management; Microprocessors; Random access memory; Transistors; Cross-layer design; Racetrack;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design Automation Conference (DAC), 2013 50th ACM/EDAC/IEEE
ISSN :
0738-100X
Type :
conf
Filename :
6560646
Link To Document :
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