Title :
Monte Carlo simulation of electron transport in amorphous silicon Schottky diodes
Author :
Lian, I. ; Hornsey, R.I. ; Chamberlain, S.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
Electron transport in reverse-biased amorphous silicon Schottky diodes has been studied by Monte Carlo simulation. These simulations have been applied to a time of flight geometry at various temperatures, and the results have been found to agree well with those from the literature. Simulations have also been used to investigate the response of the diode to step changes of bias. This case is of importance for the application of Schottky diodes to large-area X-ray sensors
Keywords :
Monte Carlo methods; Schottky diodes; amorphous semiconductors; electron traps; elemental semiconductors; silicon; Monte Carlo simulation; Si; bias step changes; electron transport; large-area X-ray sensors; reverse-biased Schottky diodes; time of flight geometry; Active matrix liquid crystal displays; Active matrix technology; Amorphous silicon; Application software; Bonding; Electron traps; Optical arrays; Optical sensors; Schottky diodes; Sensor arrays;
Conference_Titel :
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
Print_ISBN :
0-7803-4314-X
DOI :
10.1109/CCECE.1998.685618
