DocumentCode
3589452
Title
Monte Carlo simulation of electron transport in amorphous silicon Schottky diodes
Author
Lian, I. ; Hornsey, R.I. ; Chamberlain, S.G.
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Volume
2
fYear
1998
Firstpage
798
Abstract
Electron transport in reverse-biased amorphous silicon Schottky diodes has been studied by Monte Carlo simulation. These simulations have been applied to a time of flight geometry at various temperatures, and the results have been found to agree well with those from the literature. Simulations have also been used to investigate the response of the diode to step changes of bias. This case is of importance for the application of Schottky diodes to large-area X-ray sensors
Keywords
Monte Carlo methods; Schottky diodes; amorphous semiconductors; electron traps; elemental semiconductors; silicon; Monte Carlo simulation; Si; bias step changes; electron transport; large-area X-ray sensors; reverse-biased Schottky diodes; time of flight geometry; Active matrix liquid crystal displays; Active matrix technology; Amorphous silicon; Application software; Bonding; Electron traps; Optical arrays; Optical sensors; Schottky diodes; Sensor arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 1998. IEEE Canadian Conference on
ISSN
0840-7789
Print_ISBN
0-7803-4314-X
Type
conf
DOI
10.1109/CCECE.1998.685618
Filename
685618
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