Experimental/numerical investigation of buried-channel InGaA MOS-HEMTs with Al2O3 gate dielectric

Author

Morassi, Luca ; Verzellesi, Giovanni ; Pavan, Paolo ; Veksler, Dmitry ; Ok, Injo ; Zhao, Han ; Lee, Jack C. ; Bersuker, Gennadi

Author_Institution

DISMI, Univ. of Modena & Reggio Emilia, Modena, Italy

fYear

2011

Firstpage

1

Lastpage

3

Abstract

We analyze the electrical behavior of buried-channel InGaAs MOS-HEMTs with Al₂O₃ gate dielectric by means of measurements and numerical device simulations, with the aim of pointing out peculiar aspects that can be critical for device design/optimization purposes. Our analysis focuses in particular on effects associated with traps at the dielectric/barrier interface and unintentional doping in the buffer layer, showing their combined impact on crucial device parameters like threshold voltage, subthreshold slope and drain-bias dependence of subthreshold drain current.

Keywords

III-V semiconductors; MOSFET; alumina; buffer layers; buried layers; doping; gallium arsenide; high electron mobility transistors; indium compounds; Al₂O₃; InGaAs; buffer layer; buried-channel MOS-HEMT; device design; device optimization; dielectric-barrier interface; doping; gate dielectric; numerical device simulation; Aluminum oxide; Dielectrics; Indium gallium arsenide; Indium phosphide; Logic gates; MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Print_ISBN

978-1-4577-1753-6

Electronic_ISBN

978-3-8007-3356-9

Type

conf

Filename

5978320