• DocumentCode
    3589574
  • Title

    Ultra-low noise InP pHEMTs for cryogenic Deep-Space and Radio-Astronomy applications

  • Author

    Alt, A.R. ; Bolognesi, C.R. ; Gallego, J.D. ; Diez, C. ; Lopez-Fernandez, I. ; Barcia, A.

  • Author_Institution
    Millimeter-Wave Electron. Group, ETHZ, Zürich, Switzerland
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    InP HEMTs provide the best available low-noise transistor performance. The availability of InP HEMTs for cryogenic front-ends is of paramount importance in ultra-low noise Deep-Space Network (DSN) and Radio-Astronomy (RA) applications. In DSN applications, cryo-cooled InP HEMT front-ends are at the heart of the ESA 34 m antennas used to detect data carrying signals and telemetry information from deep space probes, and excellent HEMT noise performances are key to reducing antenna size and cost, as well as to simplifying spacecraft payloads. In RA, very low noise temperatures are required because of the cold cosmic microwave background (~2.73K).
  • Keywords
    III-V semiconductors; cryogenic electronics; high electron mobility transistors; indium compounds; radioastronomical techniques; semiconductor device noise; InP; cryocooling; cryogenic front-ends; low-noise transistor; radio-astronomy applications; size 34 m; ultralow noise deep-space network; ultralow noise pHEMT; Gold; HEMTs; Indium phosphide; Leakage current; Logic gates; MODFETs; Noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials
  • Print_ISBN
    978-1-4577-1753-6
  • Electronic_ISBN
    978-3-8007-3356-9
  • Type

    conf

  • Filename
    5978400