DocumentCode
3589759
Title
Analysis of pull-in voltage shift for RF MEMS ohmic switches
Author
Qinwen Huang ; Xiangguang Li ; Lu Le ; Chunhua He ; Yunhui Wang
Author_Institution
Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., Guangzhou, China
fYear
2014
Firstpage
106
Lastpage
109
Abstract
The cause of pull-in voltage shift during lifetime test of RF MEMS ohmic switches is explored. During lifetime test, the pull-in voltage of RF MEMS ohmic switches is observed to increase with lifetime test cycles. In order to determine possible causes, two steps are performed. The first is to estimate the effect of cyclic loading on the cantilever on the pull-in voltage of the RF MEMS ohmic switches. The second way is to contrast the switch contact area and bias electrode of failure sample with those of good samples to explore the reason for the gradual increase of the pull-in voltage. The results show that there are no significant changes in pull-in voltages after cyclic loading up to one billion cycles, which means there is no detectable mechanical fatigue after repeated actuation. After the cantilever is removed by FIB, it is found that some of the bias electrode surfaces are damaged in the failure samples, which is considered to be the reason for the gradual increase of the pull-in voltage.
Keywords
cantilevers; failure analysis; microelectrodes; microswitches; FIB; RF MEMS ohmic switch; bias electrode surface; cantilever; cyclic loading; mechanical fatigue detection; pull-in voltage shift analysis; switch contact area; Electric breakdown; Electrodes; Fatigue; Lifetime estimation; Micromechanical devices; Radio frequency; Voltage measurement; RF MEMS; Young´s modulus; mechanical fatigue; pull-in voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on
Print_ISBN
978-1-4799-6631-8
Type
conf
DOI
10.1109/ICRMS.2014.7107147
Filename
7107147
Link To Document