Hot carrier effects of H-shaped SOI-NMOS

SOI devices are of great interest in aerospace applications for their candidate in radiation hardened solutions. Hot carrier effects are investigated in H shaped partially depleted SOI based NMOSFET. We analyze different responses for different bias conditions. The experimental results show that the high gate and drain voltage condition is the worst case for body tied H shaped SOI-NMOS. After 2000 seconds stress in room temperature, the device physical parameters´ degradations show clearly different from maximum substrate current stress condition (VG≈=0.5VD) that is transconductance increasing with the stress time.