Experimental research of picosecond pulsed laser irradiating InGaAs photoelectric detectors

Great progress in photoelectric detector technology has been achieved during the passed decade. InGaAs photoelectric detectors operate at room temperature with high quantum efficiency for wavelengths up to 1.7microns and are useful for short wavelength IR (SWIR) applications. With the widespread use of photoelectric detectors in different aspects, the study of laser-induced effects such as disturbance and damage to photoelectric detectors is becoming an increasingly concern. In this paper, the responding signals of InGaAs photoelectric detectors under various laser power density and reverse bias are investigated in detail. The generation and transportation behaviors of photogenerated carriers and their contributions to the external response signals are analyzed. Besides, the damage effects induced by a high level of laser power density are also studied. The results are significant for the study on the behaviors of photoelectric detectors under pulsed-laser irradiation.