DocumentCode :
3589773
Title :
Variation of offset voltage in the irradiated bipolar voltage comparators
Author :
Jianbo Liu ; Yuan Liu ; Jinli Cheng ; Yunfei En ; Ting Zhang ; Yujuan He
Author_Institution :
Sch. of Mater. & Energy, Guangdong Univ. of Technol., Guangzhou, China
fYear :
2014
Firstpage :
193
Lastpage :
196
Abstract :
Total ionizing dose (TID) radiation effects in the bipolar voltage comparator with different biases and dose rates were investigated in this paper. The experimental results show that offset voltages shift after irradiation. Dominated by the current gain degradation of differential PNP transistors, the shifts of offset voltage and output characteristics were significantly affected by biases at high dose rate. Dominated by the current gain degradation of NPN transistors, the shifts of offset voltage and output characteristics were similar in all biases at low dose rate.
Keywords :
comparators (circuits); transistors; NPN transistors; TID radiation effects; biases; current gain degradation; differential PNP transistors; dose rates; irradiated bipolar voltage comparators; offset voltage variation; offset voltages; total ionizing dose radiation effects; Bipolar transistors; Computational modeling; Degradation; Interface states; Junctions; Radiation effects; bias; dose rate; offset voltage; total dose effect; voltage comparator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on
Print_ISBN :
978-1-4799-6631-8
Type :
conf
DOI :
10.1109/ICRMS.2014.7107168
Filename :
7107168
Link To Document :
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