DocumentCode :
3589774
Title :
Transient and long-term catastrophic optical damage in high power AlGaAs/GaAs laser diodes
Author :
Xueqin Gong ; Shiwei Feng
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
fYear :
2014
Firstpage :
197
Lastpage :
200
Abstract :
The phenomenon of transient and long-term COD was studied experimentally by means of thermal infrared imaging, laser scanning confocal microscopy, and transient thermal technique. The long-term COD occurs in practical operation of high power laser diode, and the melting spots were observed in output facet, as well dark line defects appeared in cavity of high power laser diodes. Meanwhile, the transient COD occurred with the input current. We have recorded the dynamics of COD process using thermal infrared camera. The temperature of transient COD has a sudden increase of 32.07 °C when the COD event occurs which maintains less than 8.69 ms. It was found that the thermal resistance of chip increases remarkably after COD, meanwhile the thermal resistance of solder and package does not change apparently.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared imaging; optical microscopy; semiconductor lasers; thermal resistance; AlGaAs-GaAs; dark line defects; high power laser diodes; laser scanning confocal microscopy; long-term catastrophic optical damage; melting spots; package; solder; thermal infrared camera; thermal infrared imaging; thermal resistance; transient catastrophic optical damage; transient thermal technique; Diode lasers; Gallium arsenide; Immune system; Semiconductor lasers; Temperature measurement; Thermal resistance; Transient analysis; AlGaAs/GaAs laser diodes; catastrophic optical damage; thermal infrared imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on
Print_ISBN :
978-1-4799-6631-8
Type :
conf
DOI :
10.1109/ICRMS.2014.7107169
Filename :
7107169
Link To Document :
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