DocumentCode
3589872
Title
Bias dependence of total dose effects in the irradiated EEPROM devices
Author
Yujuan He ; Yuan Liu
Author_Institution
Sci. & Technol. on Reliability Phys. & Applic. of Electr. Component Lab., Guangzhou, China
fYear
2014
Firstpage
836
Lastpage
838
Abstract
Total ionizing dose irradiation effect in EEPROM Devices with different bias was studied in this paper. Three biases, concluded with NONE bias, Zero bias and Work bias, were used in EEPROM devices with “1” state and "0" state in this paper. It was indicated that the threshold voltage shift negatively as total dose increased in EEPROM devices with "1" state and the threshold voltage shift positively as total dose increased in EEPROM devices with "0" state, and the Work bias was the worst irradiation bias regardless of "1" state or "0" state.
Keywords
EPROM; radiation effects; bias dependence; ionizing dose irradiation effect; irradiated EEPROM devices; none bias condition; total dose effect; work bias condition; zero bias condition; Charge carrier processes; EPROM; Logic gates; Nonvolatile memory; Radiation effects; Reliability; Threshold voltage; EEPROM; Total dose effect; bias;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability, Maintainability and Safety (ICRMS), 2014 International Conference on
Print_ISBN
978-1-4799-6631-8
Type
conf
DOI
10.1109/ICRMS.2014.7107318
Filename
7107318
Link To Document