InP transferred electron devices for power generation at frequencies above 130 GHz

Author

Judaschke, R. ; Sch?¼nemann, K.

Author_Institution

Tech. Univ. Hamburg-Harburg, Germany

Volume

1

fYear

1998

fDate

6/20/1905 12:00:00 AM

Firstpage

24

Abstract

InP Gunn devices of modulated impurity profile have been theoretically investigated for fundamental- and harmonic-mode operation at frequencies above 130 GHz. The results are based on an efficient and accurate hydrodynamic simulator which analyzes the device for impressed terminal voltages and in practical oscillator circuits. In comparison with state of-the art graded profile diodes, improved performance is demonstrated for both modes of operation. Especially for power generation above 200 GHz, the proposed modulated impurity concentration diodes are expected to be advantageous in comparison with Si IMPATT diodes

Keywords

Gunn oscillators; III-V semiconductors; indium compounds; millimetre wave generation; millimetre wave oscillators; 130 GHz; InP; InP Gunn devices; InP transferred electron devices; fundamental-mode operation; harmonic-mode operation; hydrodynamic simulator; impressed terminal voltages; modulated impurity concentration diodes; modulated impurity profile; performance; power generation; practical oscillator circuits; Analytical models; Circuit simulation; Diodes; Frequency; Gunn devices; Hydrodynamics; Impurities; Indium phosphide; Power generation; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium

Print_ISBN

0-7803-5553-9

Type

conf

DOI

10.1109/MSMW.1998.758905

Filename

758905