Title :
InP transferred electron devices for power generation at frequencies above 130 GHz
Author :
Judaschke, R. ; Sch?¼nemann, K.
Author_Institution :
Tech. Univ. Hamburg-Harburg, Germany
fDate :
6/20/1905 12:00:00 AM
Abstract :
InP Gunn devices of modulated impurity profile have been theoretically investigated for fundamental- and harmonic-mode operation at frequencies above 130 GHz. The results are based on an efficient and accurate hydrodynamic simulator which analyzes the device for impressed terminal voltages and in practical oscillator circuits. In comparison with state of-the art graded profile diodes, improved performance is demonstrated for both modes of operation. Especially for power generation above 200 GHz, the proposed modulated impurity concentration diodes are expected to be advantageous in comparison with Si IMPATT diodes
Keywords :
Gunn oscillators; III-V semiconductors; indium compounds; millimetre wave generation; millimetre wave oscillators; 130 GHz; InP; InP Gunn devices; InP transferred electron devices; fundamental-mode operation; harmonic-mode operation; hydrodynamic simulator; impressed terminal voltages; modulated impurity concentration diodes; modulated impurity profile; performance; power generation; practical oscillator circuits; Analytical models; Circuit simulation; Diodes; Frequency; Gunn devices; Hydrodynamics; Impurities; Indium phosphide; Power generation; Voltage-controlled oscillators;
Conference_Titel :
Physics and Engineering of Millimeter and Submillimeter Waves, 1998. MSMW '98. Third International Kharkov Symposium
Print_ISBN :
0-7803-5553-9
DOI :
10.1109/MSMW.1998.758905
