Hydrogen terminated diamond MESFETs: New technology for RF power applications

Author

Calvani, P. ; Conte, G. ; Dominijanni, D. ; Giovine, E. ; Pasciuto, B. ; Limiti, E.

Author_Institution

Electron. Eng. Dept., Univ. Roma Tre, Rome, Italy

fYear

2010

Firstpage

122

Lastpage

125

Abstract

Metal-Semiconductor Field Effect Transistors (MESFETs) are fabricated on hydrogen terminated chemical vapour deposited diamond substrate with sub-micron gate length. Ohmic contacts and passivation technologies are optimized for power applications. DC and RF preliminary measurements are performed and encouraging results in terms of hydrogen termination stability are achieved. Drain to Source current of more than 200 mA/mm is obtained with 80 mS/mm for transconductance. Maximum Oscillation Frequency is about 30 GHz with a current gain at 1 GHz around 23 dB. Load-pull measurements will be performed in order to investigate RF power performances of such promising devices.

Keywords

Schottky gate field effect transistors; chemical vapour deposition; diamond; high electron mobility transistors; ohmic contacts; passivation; radiofrequency integrated circuits; RF power application; drain-to-source current; hydrogen terminated chemical vapour deposited diamond substrate; hydrogen terminated diamond MESFET; hydrogen termination stability; load-pull measurement; maximum oscillation frequency; metal-semiconductor field effect transistor; ohmic contact; passivation technology; submicron gate length; transconductance; Conductivity; Diamond-like carbon; Gain; Logic gates; MESFETs; Performance evaluation; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613672