An X-band, 23.8-dBm fully integrated power amplifier with 25.8% PAE in 0.18-µm CMOS technology

Author

Chi, Ping-Sung ; Tsai, Zuo-Min ; Kuo, Jing-Lin ; Lin, Kun-You ; Wang, Huei

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2010

Firstpage

436

Lastpage

439

Abstract

An X-band high efficiency power amplifier with the highest PAE is presented in this letter. The single-stage power amplifier is implemented in TSMC standard bulk 0.18-μm 1P6M CMOS technology. In order to obtain wide bandwidth at PAE and output power, broadband output and input matching network are adopted in the design. From the measurements, the power amplifier obtained the best PAE of 25.8% and saturation output power of 23.8 dBm at 9.5 GHz. Besides, this PA demonstrates a 1-dB power bandwidth from 7.8 to 11 GHz and the PAE within the band all exceed 20%. To our knowledge, this power amplifier has the highest PAE, the smallest chip size, and wide bandwidth of output power and PAE in CMOS amplifiers at X-band to date.

Keywords

CMOS analogue integrated circuits; field effect MMIC; microwave power amplifiers; CMOS amplifiers; CMOS technology; PAE; X-band high efficiency power amplifier; bandwidth 7.8 GHz to 11 GHz; frequency 9.5 GHz; matching network; single-stage power amplifier; size 0.18 mum; Bandwidth; CMOS integrated circuits; Current measurement; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement; CMOSFET power amplifiers; X-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2010 European

Print_ISBN

978-1-4244-7231-4

Type

conf

Filename

5613702