DocumentCode :
3590561
Title :
A 40 Gsamples/s InP-DHBT Track-&-Hold Amplifier
Author :
Bouvier, Yves ; Ouslimani, Achour ; Konczykowska, Agnieszka ; Godin, Jean
Author_Institution :
ECS-ENSEA, Cergy-Pontoise, France
fYear :
2010
Firstpage :
61
Lastpage :
64
Abstract :
A fully differential 40 Gsample/s Track and Hold Amplifier with High Dynamic and Large Bandwidth is designed and fabricated in 210 GHz-fT-InP-DHBT process. Spectral measurements in track mode give a THD and a SFDR of -42.5 dB and -43.8 dB respectively for input frequency up to 9 GHz and input voltage up to -2 dBm. This THD is equivalent to 6.7 ENOB. 40 GHz sampling with 2 GHz sinusoidal input signals were measured.
Keywords :
III-V semiconductors; analogue-digital conversion; heterojunction bipolar transistors; indium compounds; microwave amplifiers; sample and hold circuits; InP; InP-DHBT track-&-hold amplifier; frequency 2 GHz; frequency 210 GHz; frequency 40 GHz; input frequency; sinusoidal input signals; Bandwidth; DH-HEMTs; Frequency measurement; Harmonic analysis; Heterojunction bipolar transistors; Indium phosphide; Silicon germanium; ADC; DHBT; InP; track-and-hold amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2010 European
Print_ISBN :
978-1-4244-7231-4
Type :
conf
Filename :
5613736
Link To Document :
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