Title :
Design of a waveguide based optoelectronic integrated circuit in silicon 0.8 micron BiCMOS technology
Author :
Bogalecki, Alfons W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Pretoria Univ., South Africa
Abstract :
An optoelectronic integrated circuit was designed, simulated and realised in a standard 0.8 micron BiCMOS silicon integrated circuit fabrication process. The designed optical circuits considered of an integrated silicon light sources, an optical guiding structure, an integrated optical detector and a high gain amplifier. Simulations predict a bandwidth capability of 115 MHz for detected photo-currents in the range of 1 nA to 100 nA, driving a 10 kΣ load.
Keywords :
BiCMOS integrated circuits; elemental semiconductors; integrated circuit design; integrated optoelectronics; silicon; waveguides; 0.8 micron; 1 to 100 nA; 115 MHz; BiCMOS technology; Si; high gain amplifier; integrated circuit fabrication process; integrated optical detector; optical guiding structure; waveguide based optoelectronic integrated circuit design; BiCMOS integrated circuits; Circuit simulation; Integrated circuit technology; Integrated optics; Microwave integrated circuits; Optical design; Optical device fabrication; Optical waveguides; Silicon; Stimulated emission;
Conference_Titel :
Electrotechnical Conference, 2000. MELECON 2000. 10th Mediterranean
Print_ISBN :
0-7803-6290-X
DOI :
10.1109/MELCON.2000.879752
