Design of a waveguide based optoelectronic integrated circuit in silicon 0.8 micron BiCMOS technology

Author

Bogalecki, Alfons W.

Author_Institution

Dept. of Electr. & Electron. Eng., Pretoria Univ., South Africa

Volume

3

fYear

2000

fDate

29-31 May 2000

Firstpage

1206

Abstract

An optoelectronic integrated circuit was designed, simulated and realised in a standard 0.8 micron BiCMOS silicon integrated circuit fabrication process. The designed optical circuits considered of an integrated silicon light sources, an optical guiding structure, an integrated optical detector and a high gain amplifier. Simulations predict a bandwidth capability of 115 MHz for detected photo-currents in the range of 1 nA to 100 nA, driving a 10 kΣ load.

Keywords

BiCMOS integrated circuits; elemental semiconductors; integrated circuit design; integrated optoelectronics; silicon; waveguides; 0.8 micron; 1 to 100 nA; 115 MHz; BiCMOS technology; Si; high gain amplifier; integrated circuit fabrication process; integrated optical detector; optical guiding structure; waveguide based optoelectronic integrated circuit design; BiCMOS integrated circuits; Circuit simulation; Integrated circuit technology; Integrated optics; Microwave integrated circuits; Optical design; Optical device fabrication; Optical waveguides; Silicon; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrotechnical Conference, 2000. MELECON 2000. 10th Mediterranean

Print_ISBN

0-7803-6290-X

Type

conf

DOI

10.1109/MELCON.2000.879752

Filename

879752