DocumentCode
3591348
Title
Capacitance variations in Cd3As2 thin film sandwich structures
Author
Din, M.B.H. ; Gould, R.D.
Volume
1
fYear
2000
fDate
6/22/1905 12:00:00 AM
Firstpage
182
Abstract
Cadmium arsenide (Cd3As2) is a high conductivity II-VI semiconductor. Following a previous DC investigation, the capacitance has been measured as a function of film thickness, temperature (163-453 K), and frequency (100 Hz-20 kHz) in Ag-Cd3 As2-Al structures. There was a decrease with frequency and an increase with temperature, as reported in various other materials. After annealing at 473 K the decrease in capacitance with frequency was enhanced due to concomitant changes in the equivalent circuit parameters, whereas unannealed Ag-Cd3As2-(Au or Ag) structures showed reduced capacitance, ascribed to changes in the contact impedance
Keywords
II-VI semiconductors; annealing; cadmium compounds; capacitance measurement; electric impedance; equivalent circuits; metal-semiconductor-metal structures; semiconductor thin films; temperature; 100 Hz to 20 kHz; 163 to 453 K; 473 K; Ag-Cd3As2-Al; Cd3As2; annealing; capacitance variations; contact impedance; equivalent circuit parameters; film thickness; frequency; high conductivity II-VI semiconductor; temperature; thin film sandwich structures; unannealed structures; Annealing; Cadmium compounds; Capacitance measurement; Conductivity; Equivalent circuits; Frequency measurement; Impedance; Semiconductor films; Temperature; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2000. Proceedings
Print_ISBN
0-7803-6355-8
Type
conf
DOI
10.1109/TENCON.2000.893566
Filename
893566
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