DocumentCode
3591842
Title
Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs
Author
Miki, H. ; Yamaoka, M. ; Tega, N. ; Ren, Z. ; Kobayashi, M. ; Emic, C. P D ; Zhu, Y. ; Frank, D.J. ; Guillorn, M.A. ; Park, D.-G. ; Haensch, W. ; Torii, K.
Author_Institution
Semicond. Innovation Res. Project, Hitachi America, Ltd., Yorktown Heights, NY, USA
fYear
2011
Firstpage
148
Lastpage
149
Abstract
In this paper, we report the results of extensive RTN trap analysis in high-k / metal-gate pFETs with respect to the response of >;1400 traps to gate voltage, and discuss, for the first time, the impact of these results on understanding BTI stress and recovery effects. Our results suggest that the statistical variation in BTI effects in scaled devices may become very large because of the wide range of trap characteristics.
Keywords
field effect transistors; random noise; statistical analysis; BTI behavior; RTN; RTN trap analysis; comprehensive observation; gate-voltage dependence; metal gate pFET; statistical variation; Correlation; Couplings; Histograms; Logic gates; Stress; Stress measurement; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2011 Symposium on
ISSN
0743-1562
Print_ISBN
978-1-4244-9949-6
Type
conf
Filename
5984678
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