DocumentCode
3592016
Title
Temperature distribution of HBTs with the effect of heat sink
Author
Chang, Yang-Hua ; Li, Shiuan-Ching
Author_Institution
Nat. Yunlin Univ. of Sci. & Technol., Yun-Lin, Taiwan
fYear
2003
Firstpage
375
Lastpage
378
Abstract
The effect of heat sink on multi-finger heterojunction bipolar transistors (HBTs) is studied with a modified three-dimensional thermal-electrical model. Simulation result shows that the effectiveness of heat sink could be less than what we expected. However, by arranging the heat sink properly, the cooling capability can be improved significantly. Design of emitter cell is also studied in this paper. 16-finger HBTs with 1-, 2-, and 4-fingers per cell are compared in terms of temperature distribution.
Keywords
heat sinks; heterojunction bipolar transistors; semiconductor device models; temperature distribution; HBT; heat sink; multifinger heterojunction bipolar transistors; temperature distribution; three-dimensional thermal-electrical model; Boundary conditions; Electronic ballasts; Equations; Fingers; Gallium arsenide; Heat sinks; Heterojunction bipolar transistors; Resistors; Temperature distribution; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN
0-7803-7749-4
Type
conf
DOI
10.1109/EDSSC.2003.1283553
Filename
1283553
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