DocumentCode :
3592016
Title :
Temperature distribution of HBTs with the effect of heat sink
Author :
Chang, Yang-Hua ; Li, Shiuan-Ching
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Yun-Lin, Taiwan
fYear :
2003
Firstpage :
375
Lastpage :
378
Abstract :
The effect of heat sink on multi-finger heterojunction bipolar transistors (HBTs) is studied with a modified three-dimensional thermal-electrical model. Simulation result shows that the effectiveness of heat sink could be less than what we expected. However, by arranging the heat sink properly, the cooling capability can be improved significantly. Design of emitter cell is also studied in this paper. 16-finger HBTs with 1-, 2-, and 4-fingers per cell are compared in terms of temperature distribution.
Keywords :
heat sinks; heterojunction bipolar transistors; semiconductor device models; temperature distribution; HBT; heat sink; multifinger heterojunction bipolar transistors; temperature distribution; three-dimensional thermal-electrical model; Boundary conditions; Electronic ballasts; Equations; Fingers; Gallium arsenide; Heat sinks; Heterojunction bipolar transistors; Resistors; Temperature distribution; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2003 IEEE Conference on
Print_ISBN :
0-7803-7749-4
Type :
conf
DOI :
10.1109/EDSSC.2003.1283553
Filename :
1283553
Link To Document :
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