DocumentCode
359242
Title
PTAT sensors based on SJFETs
Author
Amon, Slavko ; Vrtacnik, Danilo ; Rsnik, D. ; Krizaj, Dejan ; Aljancic, Uros ; Mozek, Matej
Author_Institution
Fac. of Electr. Eng., Ljubljana Univ., Slovenia
Volume
2
fYear
2000
fDate
2000
Firstpage
802
Abstract
A new PTAT temperature sensor is studied. Sensor structure is based on the recently introduced SJFET approach, enabling device isolation/integration on the same chip and being compatible with micromachining. The approach is based on the well-established discrete silicon device bipolar technology. Test PTAT structures were designed, fabricated and characterized. Measurements on fabricated test PTAT structures revealed good sensitivity, stability and linearity of sensor response.
Keywords
junction gate field effect transistors; temperature sensors; PTAT temperature sensor; current generator; device integration; device isolation; discrete silicon device bipolar technology; linearity; micromachining; self-aligned gate junction FET; sensitivity; stability; Diodes; Intelligent sensors; Isolation technology; Linearity; Semiconductor device measurement; Sensor phenomena and characterization; Silicon devices; Temperature sensors; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrotechnical Conference, 2000. MELECON 2000. 10th Mediterranean
Print_ISBN
0-7803-6290-X
Type
conf
DOI
10.1109/MELCON.2000.880055
Filename
880055
Link To Document