Title :
PTAT sensors based on SJFETs
Author :
Amon, Slavko ; Vrtacnik, Danilo ; Rsnik, D. ; Krizaj, Dejan ; Aljancic, Uros ; Mozek, Matej
Author_Institution :
Fac. of Electr. Eng., Ljubljana Univ., Slovenia
Abstract :
A new PTAT temperature sensor is studied. Sensor structure is based on the recently introduced SJFET approach, enabling device isolation/integration on the same chip and being compatible with micromachining. The approach is based on the well-established discrete silicon device bipolar technology. Test PTAT structures were designed, fabricated and characterized. Measurements on fabricated test PTAT structures revealed good sensitivity, stability and linearity of sensor response.
Keywords :
junction gate field effect transistors; temperature sensors; PTAT temperature sensor; current generator; device integration; device isolation; discrete silicon device bipolar technology; linearity; micromachining; self-aligned gate junction FET; sensitivity; stability; Diodes; Intelligent sensors; Isolation technology; Linearity; Semiconductor device measurement; Sensor phenomena and characterization; Silicon devices; Temperature sensors; Testing; Voltage;
Conference_Titel :
Electrotechnical Conference, 2000. MELECON 2000. 10th Mediterranean
Print_ISBN :
0-7803-6290-X
DOI :
10.1109/MELCON.2000.880055
