Title :
Germanium-tin on Silicon p-i-n photodiode with low dark current due to sidewall surface passivation
Author :
Yuan Dong ; Wei Wang ; Dian Lei ; Xiao Gong ; Qian Zhou ; Shuh Ying Lee ; Wan Khai Loke ; Soon-Fatt Yoon ; Gengchiau Liang ; Yee-Chia Yeo
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
We demonstrate that the surface leakage current of a Ge0.95Sn0.05/Si p-i-n photodiode can be significantly reduced by ~two orders by Si surface passivation. Furthermore, a dark current density of 0.073A/cm2 (Vbias= -1 V) is achieved.
Keywords :
current density; elemental semiconductors; germanium alloys; integrated optoelectronics; optical receivers; p-i-n photodiodes; passivation; silicon; tin alloys; Ge0.95Sn0.05-Si; dark current density; p-i-n photodiode; sidewall surface passivation; surface leakage current; voltage -1 V; Computers;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
