Modeling investigation of the influence of polycrystalline grain size on the electrical characteristics of polysilicon diode and resistor

Grain size is a critically important aspect of polycrystalline materials. To realize a high performance polysilicon diode and polysilicon resistor, it is important to understand the deviation of the grain size, and the effect on the electrical properties of polycrystalline material. The correlation of polysilicon grain size with the polysilicon deposition temperature and the dopant type was studied through process simulation, and the effect of grain size variation on electrical performance of polycrystalline diode and resistor was modeled and simulated through device simulation. The electrical behaviours of the polycrystalline diode and polycrystalline resistor in term of reverse breakdown, capacitance and resistance have been investigated and shown to be a function of the grain sizes.