Title :
Pulse-mode selective MOVPE method for high-quality strained InGaAsP MQW structure
Author :
Sakata, Y. ; Inomoto, Y. ; Komatsu, K.
Author_Institution :
ULSI Div. Dev. Lab., NEC Corp., Shiga, Japan
Abstract :
Pulse-mode selective MOVPE on a narrow stripe region was investigated for achieving excellent crystal quality of InGaAsP/InGaAsP strained MQW structure. The flatness of selectively grown InGaAsP layers were drastically improved by pulse-mode epitaxy due to the enhanced migration effect. Furthermore, very narrow photoluminescence spectrum linewidth of 28 meV at 25°C for strained MQW structure was realized. The 1.3 μm-wavelength buried heterostructure (BH) laser diode (LD) which has a strained MOW active layer grown by the pulse-mode selective MOVPE showed the record low-operation current at a high temperature of 100°C
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; interface structure; photoluminescence; quantum well lasers; semiconductor growth; semiconductor superlattices; spectral line breadth; vapour phase epitaxial growth; 1.3 mum; 100 C; 25 C; InGaAsP; InGaAsP/InGaAsP strained MQW structure; buried heterostructure laser diode; crystal quality; enhanced migration effect; flatness; high-quality strained InGaAsP MQW structure; low-operation current; narrow photoluminescence spectrum linewidth; narrow stripe region; pulse-mode epitaxy; pulse-mode selective MOVPE; strained MQW structure; Diode lasers; Epitaxial growth; Epitaxial layers; Indium phosphide; Optical scattering; Optical waveguides; Quantum well devices; Semiconductor waveguides; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712466
