DocumentCode
3593710
Title
Parasitic effect analysis for a differential LNA design
Author
Kim, Moon-Sun ; Yi, Jin-Sung ; Hyung-Joun Yoo
Author_Institution
Syst. Integration Technol. Inst., Inf. & Commun. Univ., Daejeon, South Korea
fYear
2003
Firstpage
164
Lastpage
166
Abstract
In this paper, parasitic effect of CMOS differential LNA is discussed. The sources of parasitic effects are MOS transistor, differential structure, pad, and spiral inductor. Those parasitic effects are analyzed, and differential LNA is simulated with parasitic effects and measured.
Keywords
CMOS integrated circuits; MOSFET; differential amplifiers; integrated circuit design; semiconductor device models; CMOS differential LNA; MOS transistor; differential LNA design; differential structure; pad; parasitic effect; simulation; spiral inductor; CMOS technology; Circuit simulation; Inductors; MOSFETs; Parasitic capacitance; RF signals; Radio frequency; Semiconductor device modeling; Signal processing; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN
977-05-2010-1
Type
conf
DOI
10.1109/ICM.2003.1287753
Filename
1287753
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