Title :
High speed and high gain-bandwidth-product resonant-cavity InGaAs/InAlAs avalanche photodiodes
Author :
Nie, H. ; Lenox, C. ; Kinsey, G. ; Yuan, P. ; Holmes, A.L., Jr. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
An AlInAs/InGaAs resonant-cavity SACM avalanche photodiode with high external quantum efficiency (/spl sim/70%),low noise (k<0.3), a unity-gain bandwidth of 24 GHz, and a gain-bandwidth-product of 290 GHz is reported.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; high-speed optical techniques; indium compounds; optical resonators; semiconductor device noise; 24 GHz; 70 percent; InGaAs-InAlAs; InGaAs/InAlAs resonant cavity SACM avalanche photodiode; external quantum efficiency; gain-bandwidth product; high speed device; noise; unity-gain bandwidth; Absorption; Avalanche photodiodes; Bandwidth; Indium compounds; Indium gallium arsenide; Indium phosphide; Mirrors; Optical fibers; Optical noise; Resonance;
Conference_Titel :
Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication. OFC/IOOC '99. Technical Digest
Print_ISBN :
1-55752-582-X
DOI :
10.1109/OFC.1999.767805
