Harmonic termination of AlGaN/GaN/(Al)GaN-single-and double-heterojunction HEMTs

Author

K?¼hn, Jutta ; Waltereit, Patrick ; Van Raay, Friedbert ; Aidam, Rolf ; Quay, R?¼diger ; Ambacher, Oliver ; Thumm, Manfred

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

2010

Firstpage

122

Lastpage

125

Abstract

This paper gives a systematic comparison of input-and output-second-harmonic termination in X-frequency-band MMICs (8-12 GHz) based on advanced single- and double-heterojunction AlGaN/GaN/(Al)GaN high electron mobility transistors (HEMTs) on SiC substrates. High-efficiency design-strategies are key to make use of the outstanding power capability in group-III-nitride MMICs. The study deals with the bandwidth trade-offs associated with reaching very high PAE-values beyond 55% at 10GHz in cw-operation to a 50 Ohm-load.

Keywords

HEMT integrated circuits; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN-(Al)GaN; PAE-values; X-frequency-band MMIC; double-heterojunction HEMT; frequency 8 GHz to 12 GHz; group-III-nitride MMIC; high electron mobility transistors; input-second-harmonic termination; output-second-harmonic termination; resistance 50 ohm; single-heterojunction HEMT; Aluminum gallium nitride; Bandwidth; DH-HEMTs; Gallium nitride; HEMTs; MMICs; MODFETs; Semiconductor device modeling; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498207