Embedded MEMS modules for BiCMOS process

Different MEMS process techniques have been integrated to 0.25 μm BiCMOS process. First developed technique is Back-End-Off-Line (BEOL) integration. This technique was developed using standard metallization layers of BiCMOS process with an additional MEMS process steps. An RFMEMS capacitive switch was realized using BEOL embedded MEMS module. Back-side substrate etch method was developed as second MEMS integration technique. This technique is demonstrated by several high-Q passive components which can prevent from substrate losses. Additional MEMS modules were achieved by only adding few more lithography and etch steps. Fully embedded integration of these MEMS process techniques to a standard BiCMOS process will allow realizing single-chip mm-wave transceivers using cost-effective standard SiGe process and allows designer to operate higher frequencies with less losses.