Title :
Ternary TlMeX2 compounds for MEMS application
Author :
Lyskouski, Viachaslau ; Nelayev, Vladislav
Author_Institution :
Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Results of ab initio simulation of electronic and magnetic properties of TlMeX2 compounds (Me=Ga, In. Tl; X=S, Se, Te) under the of strain deformation influence are presented. It was confirmed theoretically the experimental data about prominent anisotropy of various physical properties of these compounds, i.e. about perspective of investigated nano-structured objects as a materials for using in various nano-devices, in particular, in sensor and micro-electro-mechanical systems.
Keywords :
deformation; gallium compounds; indium compounds; micromechanical devices; GaS2; GaTe2; InSe2; InTe2; MEMS; electronic properties; magnetic properties; microelectromechanical systems; nanodevices; sensor; strain deformation; ternary TlMeX2 compounds; Anisotropic magnetoresistance; Consumer electronics; Crystalline materials; Crystals; Dielectric materials; Electrons; Ferroelectric materials; Magnetic properties; Microelectromechanical systems; Micromechanical devices; MEMS systems; TlMeX2 compounds; VASP; ab initio simulation; anisotropy; electron; molecular dynamics; quanum-mechanics approach; sensors; spin;
Conference_Titel :
Perspective Technologies and Methods in MEMS Design (MEMSTECH), 2010 Proceedings of VIth International Conference on
Print_ISBN :
978-1-4244-7325-0
Electronic_ISBN :
978-966-2191-11-0
