Title :
Insulator-metallic transition in Ti implanted silicon layers for Intermediate Band
Author :
Pastor, D. ; Olea, J. ; del Prado, A. ; Garc?a-Hemme, E. ; M??rtil, I. ; Gonz??lez-D?az, G.
Author_Institution :
Dipt. Fis. Aplic. III (Electr. y Electron.), Univ. Complutense de Madrid, Madrid, Spain
Abstract :
We present a study of Ti implanted Si layers with doses in the 1013-1016 cm-2 range that have been subsequently Pulsed-Laser Melted (PLM) at 0.8 J/cm-2. Recently, we have associated a rectifying electrical behavior found between the Ti implanted Si layers and the underlying substrate to the Intermediate Band (IB) formation in the Ti implanted Si layers with the highest doses. We analyze by means of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and electrical measurements, the insulator-metallic transition in these samples. We obtain clear differences in the sheet resistance and the Hall mobility between the Ti implanted samples with concentrations above and below the theoretical Mott limit, which determines the IB formation.
Keywords :
Hall mobility; doping profiles; electrical resistivity; elemental semiconductors; energy gap; ion implantation; metal-insulator transition; secondary ion mass spectra; semiconductor doping; semiconductor thin films; silicon; time of flight mass spectra; titanium; Hall mobility; Mott limit; Si:Ti; bandgap; insulator-metallic transition; intermediate band; ion implantation; pulsed-laser melting; rectifying electrical behavior; sheet resistance; time-of-flight secondary ion mass spectrometry; titanium concentration; Electrical resistance measurement; Hall effect; Impurities; Resistance; Silicon; Substrates; Temperature measurement; Intermediate band; Mott limit; Silicon; Titanium;
Conference_Titel :
Electron Devices (CDE), 2011 Spanish Conference on
Print_ISBN :
978-1-4244-7863-7
DOI :
10.1109/SCED.2011.5744154
