Title :
Recent progress in high efficiency InGaN LEDs
Author :
Peter, M. ; Engl, K. ; Baumann, F. ; Wirth, R. ; Laubsch, A. ; Baur, J. ; Hahn, B.
Author_Institution :
OSRAM Opto Semicond. GmbH, Regensburg, Germany
Abstract :
InGaN LED efficiency depends significantly on current density, emission wavelength and junction temperature. Phosphor-converted blue LEDs are still more efficient than RGB multi-LED solutions despite inevitable Stokes losses: 104 lm/W at 350 mA have been demonstrated for a warm-white (TC = 2950 K) phosphor-converted blue InGaN LED with 1 mm2 chip size.
Keywords :
Current density; Light emitting diodes; Optical losses; Optical pumping; Packaging; Photonic band gap; Power generation; Semiconductor device measurement; Stimulated emission; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
