Title :
25 Gbps direct modulation in 1.3-µm InAs/GaAs high-density quantum dot lasers
Author :
Tanaka, Yu ; Ishida, Mitsuru ; Takada, Kan ; Yamamoto, Tsuyoshi ; Song, Hai-Zhi ; Nakata, Yoshiaki ; Yamaguchi, Masaomi ; Nishi, Kenichi ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
The modulation characteristics of 1.3-μm InAs/GaAs high-density quantum-dot lasers is presented. The eight-stacked high-density quantum-dot layers provided high net modal gain of 46 cm-1. Fabricated Fabry-Perot lasers showed the 25-Gbps direct modulation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; Fabry-Perot lasers; InAs-GaAs; direct modulation; high density quantum dot lasers; size 1.3 mum; Bandwidth; Fabry-Perot; Gallium arsenide; Laser theory; Optical modulation; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Print_ISBN :
978-1-55752-890-2
Electronic_ISBN :
978-1-55752-890-2
