Computer modeling of amorphous silicon tandem cells

Author

Willemen, J.A. ; Zeman, M. ; Metselaar, J.W.

Author_Institution

Lab. for Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands

Volume

1

fYear

1994

Firstpage

599

Abstract

We have used a new modeling approach for simulation of a-Si:H tandem cells. The trap assisted tunneling model and an enhanced effective extended state mobility were used to model the recombination and transport in the high field region of the tunnel recombination junction. With this approach, realistic tandem cell characteristics could be obtained. We illustrate how modeling can be used for the analysis of multi-junction cells

Keywords

amorphous semiconductors; carrier mobility; electron-hole recombination; elemental semiconductors; hydrogen; power engineering computing; semiconductor device models; silicon; simulation; solar cells; tunnelling; Si:H; a-Si:H tandem cells; computer modeling; enhanced effective extended state mobility; multi-junction cells; recombination modelling; transport modelling; trap assisted tunneling model; tunnel recombination junction; Amorphous silicon; Charge carrier processes; Computational modeling; Integral equations; Photonic band gap; Photovoltaic cells; Poisson equations; Radiative recombination; Tail; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520032

Filename

520032