Title :
Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures
Author :
Da Vi??, C. ; Bell, W.H. ; Berglund, P. ; Borchi, E. ; Borer, K. ; Bruzzi, M. ; Buontempo, S. ; Casagrande, L. ; Chapuy, S. ; Cindro, V. ; Dimcovski, Z. ; Ambrosio, N.D. ; de Boer, W. ; Dezillie, B. ; Esposito, Anna ; Granat, V. ; Grigoriev, E. ; Heijne,
Author_Institution :
RD39 Collaboration, CERN, Geneva, Switzerland
fDate :
6/20/1905 12:00:00 AM
Abstract :
The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to 2×1015 n/cm2, was measured at different cryogenic temperatures and different bias voltages. In order to study reverse annealing (RA) effects, a few samples were heated to 80°C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55% and 65% for the RA and NRA sample respectively. Similar CCE was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking
Keywords :
annealing; cryogenics; neutron effects; silicon radiation detectors; 120 K; 150 K; 250 V; 283 K; 80 degC; Si; bias voltage; charge collection efficiency; cryogenic temperature; forward bias voltage; high resistivity Si detectors; large area particle tracking; low resistivity contacts; neutron irradiation; ohmic contacts; reverse annealing; reverse bias voltage; room temperature; Annealing; Charge measurement; Conductivity; Cryogenics; Current measurement; Detectors; Neutrons; Silicon; Temperature; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1998. Conference Record. 1998 IEEE
Print_ISBN :
0-7803-5021-9
DOI :
10.1109/NSSMIC.1998.775148
