DocumentCode
3596135
Title
Fundamental characteristics of 1550nm-band 20-layer-stacked QD-SOA grown on InP(311)B substrate for all-optical logic gate device
Author
Matsumoto, Akiyoshi ; Takei, Y. ; Matsushita, Akira ; Akahane, Kouichi ; Matsushima, Y. ; Utaka, K.
Author_Institution
Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan
fYear
2013
Firstpage
1
Lastpage
2
Abstract
In this paper, we fabricated the QD-SOA which utilized the highly-stacked quantum dots structure with the strain-compensation technique and MQW-SOA, and compared the measured fundamental characteristics to the one of MQW-SOA.
Keywords
optical fabrication; optical logic; quantum dot lasers; quantum well lasers; semiconductor optical amplifiers; 20-layer-stacked QD-SOA; InP; InP(311)B substrate; MQW-SOA; all-optical logic gate device; fundamental characteristics; highly-stacked quantum dot structure; strain-compensation technique; wavelength 1550 nm; Current density; Gain; Optical device fabrication; Optical films; Optical polarization; Optical ring resonators; Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microoptics Conference (MOC), 2013 18th
Type
conf
Filename
6715095
Link To Document