• DocumentCode
    3596192
  • Title

    Influence of Temperature and Vacuum on Nano-Diamond Filed Emission

  • Author

    Yanning Yang ; Zhiyong Zhang ; Jiangni Yun ; Weihu Zhang ; Fuchun Zhang

  • Author_Institution
    Provincial Key Lab. of Photoelectronic Technol., Northwest Univ., Xi´an, China
  • fYear
    2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In order to obtain the stabilized operating temperature and vacuum of nano-diamond filed emission display, the influence of temperature and vacuum changes on nano-diamond filed emission was studied, and the mechanism of field emission under high temperature and low vacuum was analyzed. It was found that nano-diamond filed emission turn-on filed decreases, and current density increases as the temperature increases. After the temperature increases to 130°C, filed emission starts to deviate from the traditional Fowler-Nordheim theory. Under low vacuum, nano-diamond field emission is very unstable. As the vacuum increases, turn-on filed decreases, and current density increases. However, when the vacuum increases to 10-4 Pa level, turn-on filed, current density, and luminescence effect becomes stable. vacuum can decrease with the increase of temperature. When the temperature is below 150°C, the decrease of the vacuum will not influence the stability of field emission. When the system operates stably, the temperature of cathode surface should be below 130°C, and the vacuum should be above 10-4 Pa level.
  • Keywords
    current density; diamond; elemental semiconductors; field emission; field emission displays; nanostructured materials; photoluminescence; C; Fowler-Nordheim theory; current density; luminescence effect; nanodiamond field emission display; turn-on field; Cathodes; Current density; Electron emission; Flat panel displays; Furnaces; Semiconductor materials; Stability; Temperature; Vacuum systems; Vacuum technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronic (SOPO), 2010 Symposium on
  • Print_ISBN
    978-1-4244-4963-7
  • Electronic_ISBN
    978-1-4244-4964-4
  • Type

    conf

  • DOI
    10.1109/SOPO.2010.5504373
  • Filename
    5504373