Title :
Deep submicron N- and P-channel MOSFETs
Author :
Reeves, C.M. ; Wilkinson, C.D.W. ; Gundlach, A.M.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
5/9/1989 12:00:00 AM
Abstract :
Describes the fabrication of deep submicron n- and p-channel MOSFETs with electrical channel lengths down to 0.1 microns. These devices are fabricated using techniques of electron beam lithography and reactive ion etching. N-channel devices with gate lengths of 0.16 microns and gate oxide thickness of 8 nm show extrinsic transconductance of 260 mS/mm whilst p-channel devices with similar gate lengths but a gate oxide thickness of 14 nm show extrinsic transconductance of 100 mS/mm. The electrical channel lengths are 0.12 microns in the n-channel devices and 0.08 microns for the p-channel devices. Smaller n-channel devices with gate lengths of 0.11 microns are also reported
Keywords :
electron beam lithography; insulated gate field effect transistors; sputter etching; 0.12 micron; 0.16 micron; 14 nm; 8 nm; electrical channel lengths; electron beam lithography; extrinsic transconductance; gate oxide thickness; n-channel MOSFETs; n-channel devices; p-channel MOSFETs; reactive ion etching;
Conference_Titel :
Sub-Micron Silicon Engineering, IEE Colloquium on
