DocumentCode :
3596558
Title :
Detection of multiple trap distribution from steady state current-voltage characteristics of organic diode
Author :
Rizvi, S.M.H. ; Mazhari, B.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
fYear :
2014
Firstpage :
1
Lastpage :
4
Abstract :
Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I - V) characteristics of an organic diode. The present work describes the application of the recently proposed G(V) technique in detecting the presence of multiple trap distribution. G - V characteristics show significantly different signatures of Gaussian and exponential traps which allow easy detection of more than one type of trap distribution. Numerical simulations coupled with experimental results of Poly-(3-hexylthiophene) (P3HT) and blends of P3HT and [6,6] phenyl C61 butyric acid methyl ester (PCBM) diodes show the presence of shallow and deep traps with different distributions.
Keywords :
electron traps; hole traps; organic semiconductors; semiconductor diodes; G-V characteristic; Gaussian trap; I-V characteristic; P3HT; PCBM diode; [6,6] phenyl C61 butyric acid methyl ester; exponential trap; multiple trap distribution detection; organic diode; organic semiconductor; poly-(3-hexylthiophene); steady state current-voltage characteristic; Electron traps; Exponential distribution; Gaussian distribution; Organic light emitting diodes; Organic semiconductors; Physics; Semiconductor diodes; current-voltage; multiple traps; organic semiconductors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
Type :
conf
DOI :
10.1109/ICEmElec.2014.7151136
Filename :
7151136
Link To Document :
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