• DocumentCode
    3596561
  • Title

    Analysis and modeling of quantum capacitance in III-V transistors

  • Author

    Dasgupta, Avirup ; Yadav, Chandan ; Rastogi, Priyank ; Agarwal, Amit ; Chauhan, Yogesh Singh

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present a physical compact model for the calculation of the capacitance including a physics based model for the calculation of the charge centroid for III-V FETs. We have used Fermi-Dirac statistics considering two energy subbands obtained from analytical Schrödinger-Poisson solution of charge. The model is validated with data from numerical device simulations and shows excellent match.
  • Keywords
    III-V semiconductors; capacitance; fermion systems; field effect transistors; quantum statistical mechanics; Fermi-Dirac statistics; III-V transistors; analytical Schrodinger-Poisson solution; charge centroid; quantum capacitance; Data models; HEMTs; Insulators; Logic gates; MODFETs; Quantum capacitance; Charge cen-troid; III-V FETs; Quantum capacitance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
  • Print_ISBN
    978-1-4673-6527-7
  • Type

    conf

  • DOI
    10.1109/ICEmElec.2014.7151139
  • Filename
    7151139
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3596561