Title :
Analysis and modeling of quantum capacitance in III-V transistors
Author :
Dasgupta, Avirup ; Yadav, Chandan ; Rastogi, Priyank ; Agarwal, Amit ; Chauhan, Yogesh Singh
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India
Abstract :
We present a physical compact model for the calculation of the capacitance including a physics based model for the calculation of the charge centroid for III-V FETs. We have used Fermi-Dirac statistics considering two energy subbands obtained from analytical Schrödinger-Poisson solution of charge. The model is validated with data from numerical device simulations and shows excellent match.
Keywords :
III-V semiconductors; capacitance; fermion systems; field effect transistors; quantum statistical mechanics; Fermi-Dirac statistics; III-V transistors; analytical Schrodinger-Poisson solution; charge centroid; quantum capacitance; Data models; HEMTs; Insulators; Logic gates; MODFETs; Quantum capacitance; Charge cen-troid; III-V FETs; Quantum capacitance;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151139
