Title :
Effect of traps on small signal equivalent circuit in AlGaN/GaN HEMTs
Author :
Mishra, Meena ; Kumar, Sudhir ; Tomar, S.K. ; Vinayak, Seema ; Sehgal, B.K.
Author_Institution :
Solid State Phys. Lab., Delhi, India
Abstract :
The presence of electrical traps in AlGaN/GaN HEMT devices can play a major role in determining the power performance of the device. In this work we have carried out measurements to understand the role of traps in these devices. The study has been carried out by comparing the Pulse I-V measurements and S parameter measurements, on the devices with knee walkout and without knee walkout. The changes in the small signal equivalent circuit of the devices have also been studied.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; pulse measurement; wide band gap semiconductors; AlGaN-GaN; HEMT; S parameter measurements; electrical traps; knee walkout; pulse I-V measurements; small signal equivalent circuit; Aluminum gallium nitride; Gallium nitride; HEMTs; Knee; MODFETs; Pulse measurements; Wide band gap semiconductors; GaN HEMTs; Pulse I-V; Traps;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151174
