• DocumentCode
    3596603
  • Title

    Growth mechanism and electron spin resonance studies of Zn1−xNixO/NiO two-phase nanocomposite

  • Author

    Joshi, D.C. ; Harish, D.D. ; Nayak, S. ; Roy, D. ; Qureshi, M. ; Saiprasad, R.L.N. ; Shiyani, T. ; Pamu, D. ; Thota, S.

  • Author_Institution
    Dept. of Phys., Indian Inst. of Technol. Guwahati, Guwahati, India
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Two-phase nanocomposites comprised of Zn1-xNixO/NiO (0.05 ≤ x ≤ 0.3) were grown by using sol-gel process with hydrated metal acetates as precursors. Thermal decomposition of the co-precipitated oxalate α-ZnNi(C2O4) yields wurtzite h.c.p. Zn1-xNixO and f.c.c. NiO together. The X-band electron spin resonance spectra provide the signatures of anisotropic spin interactions with long-range magnetic ordering at 300 K. The temperature variation (120 K ≤ T ≤ 300 K) of the resonance field HR(T) and line-width ΔHPP(T) depicts a clear anomaly across 140 K associated with the blocking/freezing effects and the contribution of additional surface anisotropy (Keff) present in the system. Both HR(T) and ΔHPP(T) follows the power-law variation δHR = (ΔHPP)n with n ≃ 2.13, as expected for partially oriented nanocrystallites.
  • Keywords
    freezing; nanocomposites; nanofabrication; nickel compounds; paramagnetic resonance; pyrolysis; sol-gel processing; zinc compounds; X-band electron spin resonance spectra; Zn1-xNixO-NiO; anisotropic spin interactions; blocking-freezing effects; co-precipitated oxalate; hydrated metal acetates; long-range magnetic ordering; sol-gel process; surface anisotropy; temperature 300 K; thermal decomposition; two-phase nanocomposite; Anisotropic magnetoresistance; II-VI semiconductor materials; Magnetic resonance; Nickel; Perpendicular magnetic anisotropy; Zinc oxide; Electron-Spin-Resonance; Lande´s g-splitting factor; Nano-composite; Wide band-gap semiconductor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
  • Print_ISBN
    978-1-4673-6527-7
  • Type

    conf

  • DOI
    10.1109/ICEmElec.2014.7151180
  • Filename
    7151180