Modeling of temperature effects in a surface-potential based ASM-HEMT model

Author

Ghosh, S. ; Sharma, K. ; Agnihotri, S. ; Chauhan, Y.S. ; Khandelwal, S. ; Fjeldly, T.A. ; Yigletu, F.M. ; Iniguez, B.

Author_Institution

Dept. of Elec. Eng., IIT Kanpur, Kanpur, India

fYear

2014

Firstpage

1

Lastpage

4

Abstract

Here, we present the modeling of temperature effects in the surface potential based “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, g_m and g_ds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.

Keywords

III-V semiconductors; SPICE; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; surface potential; wide band gap semiconductors; ASM-HEMT model; AlGaN-GaN; access resistance parameter; advanced SPICE model for high electron mobility transistor; cut-off voltage; saturation velocity; surface-potential; temperature dependency; temperature effect modeling; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Temperature dependence; Temperature distribution; Temperature measurement; AlGaN/GaN HEMTs; Temperature effects; compact model;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151197

Filename

7151197